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| MCC Features * omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC1959 Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications www..com * Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA * 1 Watt Amplifier applications * Complementary to 2SA562TM. Power Silicon NPN Transistor TO-92 Pin Configuration Bottom View C B E A E Maximum Ratings Symbol V CEO V CBO V EBO IC IB PC TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Breakdown Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Operating Junction Temperature Storage Temperature Parameter Collector-Base Cutoff Current (VCB=35Vdc, IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) Rating 30 35 5.0 500 100 500 -55 to +150 -55 to +150 Min ----Typ ----Max 0.1 0.1 Unit V V V mA mA mW O C O C Units uAdc uAdc D B C Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS ICBO IEBO ON CHARACTERISTICS DC Current Gain* 70 --(IC=100mAdc, V CE=1.0Vdc) hFE-2 DC Current Gain* 25 --(IC=400mAdc, V CE=6.0Vdc) V CE(sat) Collector-Emitter Saturation Voltage --0.1 (IC=100mAdc, IB =10mAdc) V BE Base-Emitter Voltage --0.8 (IC=100mAdc, V CE=1.0Vdc) fT Transition Frequency 200 300 (VCE=6.0Vdc, IC=20mAdc) COBO Collector Output Capacitance --- 7.0 (VCB=6.0Vdc, IE =0, f=1.0MH Z) Note: hFE(1) Classification O: 70~140, Y: 120~240, GR: 200~400 hFE(1) Classification O: 25 (Min.), Y: 40 (Min.) hFE-1 400 ---0.25 1.0 --------Vdc Vdc M HZ pF DIM A B C D E G MIN .175 .175 .500 .016 .135 .095 G DIMENSIONS INCHES MAX .185 .185 --.020 .145 .105 MIN 4.45 4.46 12.7 0.41 3.43 2.42 MM MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com Revision: 2 2003/04/30 2SC1959 MCC www..com www.mccsemi.com Revision: 2 2003/04/30 |
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